PART |
Description |
Maker |
FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
STY100NS20FD 7739 |
N-CHANNEL Power MOSFET N-CHANNEL 200V 0.022 OHM 100A ISOTOP MESH OVERLAY MOSFET From old datasheet system N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY⑩ Power MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A) -200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|
IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A) Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
|
IRF[International Rectifier]
|
IRF640 IRF640PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package HEXFET? Power MOSFET Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
IRHNB8260 IRHNB3260 IRHNB4260 IRHNB7260 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
|
IRF[International Rectifier]
|
IRFU210 IRFR210 IRFU210PBF IRFR210TRL IRFR210TRR |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)
|
IRF[International Rectifier]
|
IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A) TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|1A条(丁)|63AB Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.082ohm,身份证\u003d 31A条)
|
International Rectifier, Corp.
|
IRF630NL IRF630NPBF IRF630NS IRF630NLPBF IRF630NSP |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|